Educational Background:

PhD, University of California at Berkeley, 2003 BS, Seoul National University, South Korea, 1996

Awards:

• 2003-2006 Rowland Junior Fellow, Rowland Institute at Harvard • 1998-2003 Graduate Research Fellow, Korea Foundation for Advanced Studies • 1998-1999 Robert and Susan Katz Fellow, University of California, Berkeley • 1998-1999 Physics Department Fellowship, University of California, Berkeley • 1996 Early graduation with Summa Cum Laude, Seoul National University • 1994-1996 Undergraduate Research Fellow, Korea Foundation for Advanced Studies • 1992 Gold medalist, International Mathematics Olympiad, Russia

Research Description:

As the silicon based devices approach their fundamental size limits, the world is turning to nanoscale science to continue the modern electronics evolution. One of the most impressive results of this effort is the development of devices based on nanoscale materials, which often exhibit excellent characteristics that are comparable, and in some cases even superior, to the properties of traditional semiconductors.

Our group's main research interest is to explore fundamental physics and chemistry in the nanometer scale by investigating electrical, optical and thermal properties of individual nanostructures, including single molecules, nanocrystals, nanowires, carbon nanotubes, and their arrays. In particular, we are most interested in studying how fundamental physical quanta ? electrons, photons and phonons are coupled to each other in the nanometer scale and how we can apply this knowledge for future technological advances.

This research field is multidisciplinary in nature; exploring physical properties of individual structures involves addressing key scientific issues regarding: 1) smarter materials synthesis and device design, 2) advanced nanoscale characterization of electrical and optical properties, and 3) rational strategy for integration with the external measurements setup. The mastery of these issues is essential not only to create novel electronic and optical devices, but it also has the potential to impact other major disciplines including materials science, physical sciences, electrical engineering and bioengineering.

Selected Publications:

Park, H.; Lim, A.K.L.; Park, J.; Alivisatos, A.P.; and McEuen, P.L. Fabrication of metallic electrodes with nanometer separation by electromigration. Appl. Phys. Lett. 1999, 75, 301.

Park, H.; Park, J.; Lim,A.K.L.; Anderson, E.H.; Alivisatos, A.P.; and McEuen, P.L. Nano-mechanical Oscillations in a Single-C60 Transistor. Nature 2000, 407, 57 (selected as news and views article).

Park, J.; and McEuen, P.L. Formation of a p-type quantum dot at the end of an n-type carbon nanotube. Appl. Phys. Lett. 2001, 79, 1363.

Rosenblatt, S.; Yaish, Y.; Park, J.; Gore, J.; Sazonova, V.; and McEuen, P.L. High performance electrolyte-gated carbon nanotube transistors. Nano Letters 2002, 2, 869.

Park, J.; Pasupathy, A.N.; Goldsmith, J.I.; Chang, C.; Yaish, Y.; Petta, J.R.; Rinkoski, M.; Sethna, J.P.; Abruna, H.D.; McEuen, P.L.; and Ralph, D.C. Coulomb blockade and the Kondo effect in single-atom transistors. Nature 2002, 417, 722. (selected as cover page article)

Park, J.; Pasupathy, A.N.; Goldsmith, J.I.; Soldatov, A.V.; Chang, C.; Yaish, Y.; Sethna, J.P.; Abruna, H.D.; Ralph, D.C.; and McEuen, P.L. Wiring up single molecules. Thin Solid Films 2003, 457, 438-439.

Pasupathy, A.N.; Park, J.; Chang, C.; Soldatov, A.V.; Lebedkin, S.; Bialczak, R. C.; Grose, J. E.; Donev, L. A. K.; Sethna, J.P.; Ralph, D.C.; and McEuen, P.L. Vibration-Assisted Electron Tunneling in C140 transistors. Nano Letters 2005, 5, 203.

Ahn, Y.; Dunning, J.; and Park, J. Scanning Photocurrent Imaging and Electronic Band Studies in SiNW Field Effect Transistors. Nano Letters 2005, 5, 1367.