Educational Background:

PhD, California Institute of Technology, 1987 BChE, University of Minnesota, 1981

Awards:

• National Science Foundation Presidential Young Investigator Award • Lilly Endowment Teaching Fellow • College of Engineering Teaching Award, Cornell University • STA Nuclear Fellowship, Science and Technology Agency of Japan

Research Description:

James R. Engstrom is currently an Associate Professor in the School of Chemical and Biomolecular Engineering, and Member of the Graduate Field of Chemistry and Chemical Biology at Cornell University, and is the recipient of numerous awards, including, in 1991, a NSF Presidential Young Investigator Award. He is the author of over 50 peer-reviewed publications, and has presented his work at nearly 100 national and international meetings, as well as to private industry. Prof. Engstrom is widely recognized for his work concerning molecular beam scattering of thin film precursors from semiconductor surfaces, and fundamental studies of thin film deposition, making use of precisely controlled beams of molecular and/or atomic species, with applications in silicon-based microelectronics, and, more recently, molecular electronics. Prof. Engstrom was granted a leave of absence starting in 1998 in order to join the technical management team of an exciting start-up firm, Symyx Technologies. Despite a very enjoyable stay at Symyx, he returned to his true calling, educating undergraduate and graduate students at Cornell in 2001. Due in part to the invaluable experience he gained in industry he is currently establishing a research area for his group that involves work on microchemical systems. The focus is on both fundamentals and applications of these systems in point-of-use chemical production, high-throughput screening, and acceleration of the research and development cycle. Prof. Engstrom holds 1 patent, and no less than 5 have been filed recently or are in preparation for filing.

Selected Publications:

Zheng, Y.-J., P. F. Ma and J. R. Engstrom, Etching by atomic hydrogen of Ge overlayers deposited on Si(100), J. Appl. Phys. 2001, 90, 3614.

Schroeder, T. W., P. F. Ma, A. M. Lam, Y.-J. Zheng and J. R. Engstrom, Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation, Appl. Phys. Lett. 2001, 79, 2181.